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Prominent & Leading Wholesale Distributor from Mumbai, we offer g40n60d igbt 600v 40a, stm igbt & mosfet, vishay mosfet, lrc mosfet & igbt, infineon igbt & mosfet and wxdh mosfet & igbt.
G40N60D IGBT 600V 40A

G40N60D IGBT 600V 40A

Product Price: Rs 55 / PieceGet Best Price

Minimum Order Quantity: 1000 Piece

Product Details:
Part NumberG40N60D
Mounting TypeTO247
Pin Count3
Model Name/NumberG40N60
Usage/ApplicationSOLAR INVERTER
MAKE:        WXDH
WXDH G15N60DTO-220F600V15A
WXDH G40N60DTO-247600V40A
WXDH G60N60DTO-247600V60A
WXDH G60N65DTO-247650V60A
WXDH G15N120DTO-2471200V15A
WXDH G25N120DTO-2471200V25A
WXDH G30N120DTO-2471200V30A
WXDH G40N120DTO-2471200V40A

Additional Information:

  • Item Code: 8541
  • Production Capacity: 1000K
  • Delivery Time: 2 WEEKS
  • Packaging Details: TUBE
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STM IGBT & Mosfet
  • STM IGBT & Mosfet
  • STM IGBT & Mosfet

STM IGBT & Mosfet

Product Price: Rs 25 / PieceGet Best Price

Product Details:


ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors) ranging from 300 to 1250 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies. IGBTs belong to the STPOWER family.
Offering an optimal trade-off between switching performance and on-state behavior (variant), ST's IGBTs are suitable for industrial and automotive segments in applications such as general-purpose inverters, motor control, home appliances, HVAC, UPS/SMPS, welding equipment, induction heating, solar inverters, traction inverters, on-board chargers & fast chargers.
Our IGBTs are available as bare die as well as packaged discrete components.

STPOWER IGBT main characteristics:

  • Best trade-off between conduction and switch-off energy losses
  • Maximum junction temperature up to 175 °C
  • Wide switching frequency range
  • Co-packaged anti-parallel diode option for improved power dissipation and optimal thermal management

IGBTs Types:

  • STPOWER IGBTs 300-400V(clamped)
  • STPOWER IGBTs 600-650V(clamped)
  • STPOWER IGBTs >= 1200V
  • STPOWER IGBTs Bare die


ST's power MOSFET portfolio offers a broad range of breakdown voltages from –100 to 1700 V, with low gate charge and low on-resistance, combined  with state-of-the art packaging. ST's process technology for both high-voltage power MOSFETs (MDmesh™) and low-voltage power MOSFETs (STripFET) ensures an enhanced power handling capability, resulting in high-efficiency solutions. Power MOSFETs belong to the STPOWER family.

  • STPOWER N-channel MOSFETs 12V to 30V
  • STPOWER N-channel MOSFETs > 30V to 350V
  • STPOWER N-channel MOSFETs > 350V to 700V
  • STPOWER N-channel MOSFETs > 700V
  • STPOWER N-channel MOSFETs -20V to -500V
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Vishay Mosfet

Vishay Mosfet

Product Price: Rs 25 / PieceGet Best Price

Product Details:
Vishay is one of the world's foremost manufacturers of power MOSFETs. The Vishay Siliconix MOSFET product line includes a diverse range of advanced technologies in more than 30 package types, from the chipscale MICRO FOOT® and thermally advanced PowerPAK® families to the classic “TO” transistor outline. Single- and multi-die MOSFETs are available with integrated features such as Schottky body diodes and ESD protection, while our unique PowerPAIR® devices combine optimized combinations of MOSFETs for synchronous buck converters and other applications in a single package.

Type And Configuration:
  • Single
  • Dual
  • N- and P- Pair
  • MOSFET- Schottky Combo
  • MOSFETs +driver (DrMOS)
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LRC Mosfet & Igbt

LRC Mosfet & Igbt

Product Price: Rs 3.00 / PieceGet Best Price

Product Details:
  • Small Signal MOSFETs
  • Low-Voltage Power MOSFETs
  • High-Voltage Power MOSFETs
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Infineon IGBT & MOSFET
  • Infineon IGBT & MOSFET
  • Infineon IGBT & MOSFET

Infineon IGBT & MOSFET

Product Price: Rs 25.00 / PieceGet Best Price

Product Details:

IGBT product selection provides a broad variety of different devices. These products address a wide range of applications in the field of automotive, traction, industrial and consumer systems. Our solutions offer very low power losses in the forward and blocking state, require only low drive power and have a high efficiency. The IGBTs can withstand voltages up to 6.5 kV and operate at a switching frequency from 2 kHz to 50 kHz. Thanks to a wide technology portfolio, the industrial and power control IGBTs are designed for a superior current capability and a higher pulse load capacity for an ultra low power consumption.

IGBT Subcategories:
  • IGBT Discretes
  • IGBT Modules
  • IGBT Stacks & IGBT Assemblies
  • IGBT Bare Dies
  • Automative IGBT Modules


Infineon''s n-channel and p-channel power MOSFETs are designed in a unique way to bring more efficiency, power density and cost-effectiveness.

MOSFET Subcategories:
  • 20V-800V Automotive MOSFET
  • 500V-950V Cool MOS N-Channel MOSFET
  • 12V - 300V N-Channel Power MOSFET
  • 12V - 250V P-Channel Power MOSFET
  • 250V- 600V Small Signal/Single Power MOSFET
  • 60V - 600V N-Channel Depletion Mode MOSFET
  • 20V - 60V Complementary MOSFET
  • 650V - 1700V Silicon Carbide MOSFET
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WXDH Mosfet & IGBT

WXDH Mosfet & IGBT

Product Price: Rs 20 / PieceGet Best Price

Product Details:
  • Cool-MOS
  • Single-tube
  • Module
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NCE Power
  • NCE Power
  • NCE Power

NCE Power

Product Price: Rs 24 / PieceGet Best Price

Product Details:
Country of OriginMade in India


As a leading MOSFET discrete device design and supplier, Sunclean is committed to promoting a full range of MOSFET products with excellent performance, stable quality and extremely competitive prices. We provide circuit designers with a comprehensive selection of products, with breakdown voltage covering -200V to 300V, with the most advanced packaging technology, to provide you with a current range of 100mA to 400A. We focus on continuously improving the system efficiency and power density of MOSFETs in the process of power conversion, as well as the impact resistance and avalanche resistance of the switching process in harsh environments, to achieve fast, stable and efficient power management and power conversion.

Features and advantages:

  • Low FOM (Rdson * Qg)
  • High avalanche tolerance, 100% EAS test.
  • Low reverse recovery charge (Qrr), low reverse recovery peak current (Irm).
  • Antistatic ability (ESD).
  • Antistatic ability (ESD).
  • Comply with RoHS standard


MOSFET Subcategories:

  • N - MOSFET


2. Super Trench MOSFET

3. Super Junction MOSFET

Basing on the advanced charge balance technology, NCE Power launches the 2nd generation MOSFETs. Comparing with the 1st generation, the new generation MOSFETs enhances the unit area current density and decreases Rdson by 40% and switching loss by 12% to improve the total energy efficiency by 1.7%. We provide various products with 600~900V Vds and 4~20A Id for circuit designers. Moreover, we bring you different power options with different packages, to realize less PCB space usage and higher reliability.


  • Excellent power conversion efficiency.
  • Lower Rdson(Ron*A) for  lower on-power loss.
  • Lower FOM(Ron*Qg) for lower switching power loss and driving power loss.
  • Smaller package size.
  • Excellent EAS ability (100% EAS testing)


Based on Trench Field Stop IGBT technology and Ultra-thin Wafer Process, the newly-released IGBT series products, have improved device structure and power density, resulting in the excellent dynamic and static features.
Compared to the last generation, with smaller and thinner size, the new one has VCEsat decreased by 0.3V and switching loss by 20%+. Besides, the new products can not only keep the same good short-circuit capability and high parameter consistency, but also stand higher temperature and last longer time, making them more advanced.

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