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MOSFET
Our product range includes a wide range of igbt g15n120d to-247 insulated gate bipolar transistor, igbt g40n120d to-247 insulated gate bipolar transistor, d4n65 to-252 650v 4a n-channel enhancement mode power mosfet, f20n50 to-220f 500v 20a n-channel enhancement mode power mosfet and dhs056n85 to-220 105a 85v n-channel enhancement mode power mosfet.
IGBT G15N120D to-247 Insulated Gate Bipolar Transistor
Product Price: Rs 60 / PieceGet Best Price
Product Details:
| Current | 15A |
| Brand | WXDH |
| Part Number | G15N120D |
| Voltage | 1200V |
| Type | N-Type Semiconductor |
| Package | to-247 |
| Material | Silicon |
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 1200 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 30 | A | ||
| Collector Current | (Tc=100ºC) | 15 | A | ||
| Pulsed Collector Current | ICM | 45 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 15 | A | ||
| Diode Maximum Forward Current | IFM | 45 | A | ||
| Total Dissipation | TC=25ºC | PD | 160 | W | |
| TC=100ºC | PD | 65 | W | ||
| Junction Temperature | Tj | 150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 2.0V @ IC =15A and VGE=15V |
| Integrated FRD |
| Applications |
| Electromagnetic heating (IH) equipment such as induction cooker. |
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IGBT G40N120d to-247 Insulated Gate Bipolar Transistor
Product Price: Rs 105 / PieceGet Best Price
Minimum Order Quantity: 25 Piece
Product Details:
| Mounting Type | DIP |
| Brand | WXDH |
| Part Number | G40N120D |
| Current | 40A |
| Voltage | 1200V |
| Pin Count | 3 |
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 1200 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 80 | A | ||
| Collector Current | (Tc=100ºC) | 40 | A | ||
| Pulsed Collector Current | ICM | 160 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 20 | A | ||
| Diode Maximum Forward Current | IFM | 60 | A | ||
| Total Dissipation | TC=25ºC | PD | 278 | W | |
| TC=100ºC | PD | 150 | W | ||
| Junction Temperature | Tj | 150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 1.9V @ IC =40A and VGE=15V |
| Applications |
| Inverter welding machine |
| General frequency converter |
| UPS |
| Motor control |
Additional Information:
- Item Code: G40N120D
- Production Capacity: 100000
- Delivery Time: STOCK
- Packaging Details: 25/TUBE
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D4N65 to-252 650V 4A N-Channel Enhancement Mode Power MOSFET
Product Price: Rs 7.50 / PieceGet Best Price
Product Details:
| Brand | WXDH |
| Part Number | D4n65 |
| Current | 4A |
| Type | N-Type Semiconductor |
| Material | Metal-Oxide Semiconductor |
| Package | to-252b |
650V 4A N-Channel Enhancement Mode Power Mosfet D4n65 to-252 :
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 4N65/I4N65/E4N65/B4N65/D4N65 | F4N65 | ||||
| Drian-Source Voltage | VDSS | 650 | V | ||
| Gate-to-Source Voltage | VGSS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 4 | A | ||
| (T=100ºC) | 2.6 | A | |||
| Drain Current(Pulsed) | IDM | 16 | A | ||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 75 | 30 | W | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| ESD improved capability |
| Low ON Resistance(Rdson≤2.8Ω) |
| Low Gate Charge(Typ: 14.5nC) |
| Low Reverse Transfer Capacitances(Typ: 3.5pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of adaptor and charger. |
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F20N50 to-220F 500V 20A N-Channel Enhancement Mode Power MOSFET
Product Price: Rs 75 / PieceGet Best Price
Product Details:
| Brand | WXDH |
| Part Number | F20n50 |
| Type | N-type Semiconductor |
| Package | to-220f |
| Application | Power Switching Circuit |
| Material | Metal-Oxide Semiconductor |
500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f :
| Features |
| Fast Switching |
| Low ON Resistance(Rdson≤0.3Ω) |
| Low Gate Charge(Typ: 52nC) |
| Low Reverse Transfer Capacitances(Typ: 16pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of adaptor and charger. |
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DHS056N85 to-220 105A 85V N-Channel Enhancement Mode Power MOSFET
Product Price: Rs 18 / PieceGet Best Price
Product Details:
| Brand | WXDH |
| Part Number | Dhs056n85 |
| Current | 105A |
| Type | N-Type Semiconductor |
| Package | to-220 |
| Material | Metal-Oxide Semiconductor |
105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220 :
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D | DHS056N85F | ||||
| Drian-to-Source Voltage | VDSS | 85 | V | ||
| Gate-to-Source Voltage | VGSS | ±20 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 105 | A | ||
| (T=100ºC) | 73 | A | |||
| Drain Current(Pulsed) | IDM | 400 | A | ||
| Single Pulse Avalanche Energy | EAS | 470 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 120 | 35 | W | |
| Junction Temperature | Tj | -55~175 | ºC | ||
| storage Temperature | Tstg | -55~175 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance |
| Low Gate Charge |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Synchronous rectification in SMPS |
| Power tools |
| UPS |
| Motor control |
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