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Mosfet And IGBT
Prominent & Leading Wholesale Distributor from Mumbai, we offer wxdh mosfet and igbt, lrc mosfet & igbt, nce power, g40n60d igbt, vishay mosfet and stm igbt and mosfet.
WXDH Mosfet And IGBT
Product Price: Rs 20 / PieceGet Best Price
Product Brochure
Product Details:
| Brand | WXDH |
| Transistor Type | PNP |
| Mounting Type | DIN |
| Current | 40 A |
| Voltage | 600 V |
| Packaging Type | Box |
| Power | 500 W |
- VDMOS
- Cool-MOS
IGBT:
- Single-tube
- Module
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LRC Mosfet & Igbt
Product Price: Rs 10 / PieceGet Best Price
Product Details:
| Brand | LRC |
| Mounting Type | DIN |
| Voltage | 600 V |
| Packaging Type | Box |
| Number Of Pins | 3 |
| Drain Source Voltage | 75V |
| Power | 200 W |
| Operating Temperature | -55-175 Degree Celsius |
- Small Signal MOSFETs
- Low-Voltage Power MOSFETs
- High-Voltage Power MOSFETs
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NCE Power
Product Price: Rs 24 / PieceGet Best Price
Product Details:
| Brand | Sourcewell |
| Transistor Type | NPN |
| Mounting Type | SMD |
| Current | 100mA to 400A |
| Voltage | -200V to 300V |
| Country of Origin | Made in India |
| Packaging Type | Box |
1.MOSFET-
As a leading MOSFET discrete device design and supplier, Sunclean is committed to promoting a full range of MOSFET products with excellent performance, stable quality and extremely competitive prices. We provide circuit designers with a comprehensive selection of products, with breakdown voltage covering -200V to 300V, with the most advanced packaging technology, to provide you with a current range of 100mA to 400A. We focus on continuously improving the system efficiency and power density of MOSFETs in the process of power conversion, as well as the impact resistance and avalanche resistance of the switching process in harsh environments, to achieve fast, stable and efficient power management and power conversion.
Features and advantages:
- Low FOM (Rdson * Qg)
- High avalanche tolerance, 100% EAS test.
- Low reverse recovery charge (Qrr), low reverse recovery peak current (Irm).
- Antistatic ability (ESD).
- Antistatic ability (ESD).
- Comply with RoHS standard
MOSFET Subcategories:
- N - MOSFET
- P- MOSFET
- N+P MOSFET
2. Super Trench MOSFET
3. Super Junction MOSFET
Basing on the advanced charge balance technology, NCE Power launches the 2nd generation MOSFETs. Comparing with the 1st generation, the new generation MOSFETs enhances the unit area current density and decreases Rdson by 40% and switching loss by 12% to improve the total energy efficiency by 1.7%. We provide various products with 600~900V Vds and 4~20A Id for circuit designers. Moreover, we bring you different power options with different packages, to realize less PCB space usage and higher reliability.
Features:
- Excellent power conversion efficiency.
- Lower Rdson(Ron*A) for lower on-power loss.
- Lower FOM(Ron*Qg) for lower switching power loss and driving power loss.
- Smaller package size.
- Excellent EAS ability (100% EAS testing)
4.IGBT
Based on Trench Field Stop IGBT technology and Ultra-thin Wafer Process, the newly-released IGBT series products, have improved device structure and power density, resulting in the excellent dynamic and static features.
Compared to the last generation, with smaller and thinner size, the new one has VCEsat decreased by 0.3V and switching loss by 20%+. Besides, the new products can not only keep the same good short-circuit capability and high parameter consistency, but also stand higher temperature and last longer time, making them more advanced.
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G40N60D IGBT
Product Price: Rs 55 / PieceGet Best Price
Minimum Order Quantity: 1000 Piece
Product Details:
| Mounting Type | TO247 |
| Pin Count | 3 |
| Current | 40 A |
| Model Name/Number | G40N60 |
| Brand | WXDH |
| Voltage | 600 V |
| Usage/Application | Electronic |
| Packaging Type | Box |
| WXDH G15N60D | TO-220F | 600V | 15A |
| WXDH G40N60D | TO-247 | 600V | 40A |
| WXDH G40T60D | TO-3PN | 600V | 40A |
| WXDH G60N60D | TO-247 | 600V | 60A |
| WXDH G60N65D | TO-247 | 650V | 60A |
| WXDH G15N120D | TO-247 | 1200V | 15A |
| WXDH G25N120D | TO-247 | 1200V | 25A |
| WXDH G30N120D | TO-247 | 1200V | 30A |
| WXDH G40N120D | TO-247 | 1200V | 40A |
Additional Information:
- Item Code: 8541
- Production Capacity: 1000K
- Delivery Time: 2 WEEKS
- Packaging Details: TUBE
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Vishay Mosfet
Product Price: Rs 25 / PieceGet Best Price
Product Details:
| Maximum Operating Temperature | 55-175 Degree Celsius |
| Brand | Vishay |
| Mounting Type | Through Hole |
| Drain Source Voltage | 100 V |
| Emitter Voltage | 50 V |
| Current | 130 A |
Type And Configuration:
- Single
- Dual
- N- and P- Pair
- MOSFET- Schottky Combo
- MOSFETs +driver (DrMOS)
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STM IGBT And Mosfet
Product Price: Rs 80 / PieceGet Best Price
Product Details:
| Voltage | 600 V |
| Brand | STM |
| Usage/Application | Electronic |
| Current Rating | 95 A |
| Packaging Type | Box |
IGBT:
ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors) ranging from 300 to 1250 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies. IGBTs belong to the STPOWER family.
Offering an optimal trade-off between switching performance and on-state behavior (variant), ST's IGBTs are suitable for industrial and automotive segments in applications such as general-purpose inverters, motor control, home appliances, HVAC, UPS/SMPS, welding equipment, induction heating, solar inverters, traction inverters, on-board chargers & fast chargers.
Our IGBTs are available as bare die as well as packaged discrete components.
STPOWER IGBT main characteristics:
- Best trade-off between conduction and switch-off energy losses
- Maximum junction temperature up to 175 ??C
- Wide switching frequency range
- Co-packaged anti-parallel diode option for improved power dissipation and optimal thermal management
IGBTs Types:
- STPOWER IGBTs 300-400V(clamped)
- STPOWER IGBTs 600-650V(clamped)
- STPOWER IGBTs >= 1200V
- STPOWER IGBTs Bare die
MOSFETs:
ST's power MOSFET portfolio offers a broad range of breakdown voltages from ???100 to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST's process technology for both high-voltage power MOSFETs (MDmesh???) and low-voltage power MOSFETs (STripFET) ensures an enhanced power handling capability, resulting in high-efficiency solutions. Power MOSFETs belong to the STPOWER family.
MOSFET Types:
- STPOWER N-channel MOSFETs 12V to 30V
- STPOWER N-channel MOSFETs > 30V to 350V
- STPOWER N-channel MOSFETs > 350V to 700V
- STPOWER N-channel MOSFETs > 700V
- STPOWER N-channel MOSFETs -20V to -500V
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Infineon IGBT And Mosfet
Product Price: Rs 65 / pairGet Best Price
Product Details:
| Mounting Type | DIN |
| Brand | Infineon |
| Voltage | 6.5 kV |
| Switching Frequency | 2 kHz to 50 kHz |
| Output Power | 500 W |
| Packaging Type | Box |
IGBT product selection provides a broad variety of different devices. These products address a wide range of applications in the field of automotive, traction, industrial and consumer systems. Our solutions offer very low power losses in the forward and blocking state, require only low drive power and have a high efficiency. The IGBTs can withstand voltages up to 6.5 kV and operate at a switching frequency from 2 kHz to 50 kHz. Thanks to a wide technology portfolio, the industrial and power control IGBTs are designed for a superior current capability and a higher pulse load capacity for an ultra low power consumption.
IGBT Subcategories:
- IGBT Discretes
- IGBT Modules
- IGBT Stacks & IGBT Assemblies
- IGBT Bare Dies
- Automative IGBT Modules
MOSFET:
Infineon''s n-channel and p-channel power MOSFETs are designed in a unique way to bring more efficiency, power density and cost-effectiveness.
MOSFET Subcategories:
- 20V-800V Automotive MOSFET
- 500V-950V Cool MOS N-Channel MOSFET
- 12V - 300V N-Channel Power MOSFET
- 12V - 250V P-Channel Power MOSFET
- 250V- 600V Small Signal/Single Power MOSFET
- 60V - 600V N-Channel Depletion Mode MOSFET
- 20V - 60V Complementary MOSFET
- 650V - 1700V Silicon Carbide MOSFET
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